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 HT82V736 Stereo Headphone Driver with Mute
Features
* Operating voltage: 2.4V~6.0V * Internal mute function to prevent power On/Off clicks * Excellent power supply ripple rejection * High slew rate * Low total harmonic distortion * Low power consumption * Short circuit elimination * Integrated voltage divider (VDD/2) to eliminate
external resistors
* Wide temperature operating range * 8-pin SOP package
Applications
* CD-ROM/RW, DVD-ROM/RW * PDA, MP3 * Portable Digital Audio * Discman, Camcorders * Headphone Amplifier
General Description
The HT82V736 is a class AB stereo earphone driver designed for portable digital audio application. It provides an integrated mute function to prevent popping sounds when power is turned on and off. In addition, the HT82V736 further integrates a voltage divider, and therefore the external resistors can be eliminated. The HT82V736 has a fixed gain of 6dB so that external gain setting is unnecessary. It is fully pin and functionally compatible with BH3544 which is suitable for effective low cost applications.
Block Diagram
M UTE OUT1 6dB A + 90kW
M u te OUT2 B + IN 2 B ia s B IA S 90kW 6dB
IN 1 VDD VSS
Pin Assignment
OUT1 1 8 2 7 3 6 4 5 M UTE IN 1 VSS VDD OUT2 B IA S IN 2
H T82V736 8 S O P -A
Rev. 1.00
1
February 3, 2005
HT82V736
Pin Description
Pin No. 1 2 3 4 5 6 7 8 Pin Name OUT1 MUTE IN1 VSS IN2 BIAS OUT2 VDD I/O O I I 3/4 I I O 3/4 Channel 1 output pin Mute control (Mute On: low; Mute Off: high) Audio input channel 1 Negative power supply, ground Audio input channel 2 VDD/2 connected a capacitor to ground to eliminate power On/Off clicks Channel 2 output pin Positive power supply Description
Absolute Maximum Ratings
Supply Voltage ..........................VSS-0.3V to VSS+7.0V Input Voltage .............................VSS-0.3V to VDD+0.3V Storage Temperature ...........................-50C to 125C Operating Temperature ..........................-40C to 85C
Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Electrical Characteristics
Symbol VDD IQ IMUTE Parameter Supply Voltage Quiescent Current Mute Current
VIN=0.5Vrms; Vss=0V; f=1kHz; Ta=25C; RL=32W (unless otherwise specified) Test Conditions VDD 3/4 5V 5V VIN=0Vrms VIN=0Vrms Conditions 3/4 Min. 2.4 3/4 3/4 3/4 3/4 3/4 fRR=100Hz; VRR=-20dBV RL=32W, THD<0.1% RL=16W, THD<0.1% Typ. 3/4 2.5 100 Max. 6.0 4.0 3/4 Unit V mA mA
D.C. Characteristics VMUTE DAV AV PSRR PO1 PO2 Mute Pin Control Voltage Differential Channel Voltage Gain Voltage Gain Power Supply Rejection Ratio Rated Output Power 1 Rated Output Power 2 5V 5V 5V 5V 5V 5V 0.3 -0.5 3/4 65 60 110 0.7 0 6 75 65 115 1.6 0.5 3/4 3/4 3/4 3/4 V dB dB dB mW mW
A.C. Characteristics THD ATT XTALK VNO Total Harmonic Channel Distortion Factor Mute Attenuation Channel Separation Output Noise Voltage 5V 5V 5V 5V BW=20~20kHz f=1kHz f=1kHz VIN=0Vrms, BW=20~20kHz 3/4 80 55 3/4 0.02 90 70 -97 0.05 3/4 3/4 -90 % dB dB dBV
Rev. 1.00
2
February 3, 2005
HT82V736
Typical Performance Characteristics
20 10 5
V DD= 5 V f= 1 0 0 H z
2 1 T H D + N (% ) 0 .5
0 .2 0 .1 0 .0 5
0 .0 2 0 .0 1 200m
500m
1m
2m
5m
10m
20m
50m
100m
200m
O u tp u t P o w e r (W )
Fig.1 Total Harmonic Distortion vs. Output Power
20 10 5
V
DD= 5 V f= 1 k H z
2 1 T H D + N (% ) 0 .5
0 .2 0 .1 0 .0 5
0 .0 2 0 .0 1 200m
500m
1m
2m
5m
10m
20m
50m
100m
200m
O u tp u t P o w e r (W )
Fig.2 Total Harmonic Distortion vs. Output Power
Rev. 1.00
3
February 3, 2005
HT82V736
20 10 5
V DD= 5 V f= 1 0 k H z
2 1 T H D + N (% ) 0 .5
0 .2 0 .1 0 .0 5
0 .0 2 0 .0 1 200m
500m
1m
2m
5m
10m
20m
50m
100m
200m
O u tp u t P o w e r (W )
Fig.3 Total Harmonic Distortion vs. Output Power
+40 +30 +20 +10 0 -1 0 -2 0 -3 0
DD= 5 V f= 1 k H z R L= 3 2 W
V
M UTE OFF
(d B V )
-4 0 -5 0 -6 0 -7 0 -8 0 -9 0 -1 0 0 -1 1 0 -1 2 0 -1 3 0 -1 4 0 20 50 100 200 500 F re q u e n c y (H z ) 1k 2k 5k 10k 20k
M u te A tte n u a tio n
V
O
M UTE ON
Fig.4 Mute Attenuation vs. Frequency
Rev. 1.00
4
February 3, 2005
HT82V736
0 -1 0 -2 0 -3 0 -4 0 O u tp u t N o is e V o lta g e (d B V ) -5 0 -6 0 -7 0 -8 0 -9 0 -1 0 0 -1 1 0 -1 2 0 -1 3 0 -1 4 0 -1 5 0 10
R
V
L
DD
=5V =32W
C hannel1
C hannel2
20 50 100 200 500 F re q u e n c y (H z ) 1k 2k 5k 10k 20k
Fig.5 Output Noise Voltage vs. Frequency
Application Circuits
220mF 100kW 2 1mF V
IN 1
V
1
M UTE
OUT1 M UTE 3 4 IN 1 VSS
VDD OUT2 B IA S IN 2 5 6 7
8 220mF V V 1mF
IN 2 DD
1mF
10mF
100mF
H T82V736
Rev. 1.00
5
February 3, 2005
HT82V736
Package Information
8-pin SOP (150mil) Outline Dimensions
A 1
8
5 B 4
C
C' G D E F
H
a
Symbol A B C C D E F G H a
Dimensions in mil Min. 228 149 14 189 53 3/4 4 22 4 0 Nom. 3/4 3/4 3/4 3/4 3/4 50 3/4 3/4 3/4 3/4 Max. 244 157 20 197 69 3/4 10 28 12 10
Rev. 1.00
6
February 3, 2005
HT82V736
Product Tape and Reel Specifications
Reel Dimensions
T2 D
A
B
C
T1
SOP 8N Symbol A B C D T1 T2 Description Reel Outer Diameter Reel Inner Diameter Spindle Hole Diameter Key Slit Width Space Between Flange Reel Thickness Dimensions in mm 3301 62.01.5 13.0+0.5 -0.2 2.00.5 12.8+0.3 -0.2 18.20.2
Rev. 1.00
7
February 3, 2005
HT82V736
Carrier Tape Dimensions
D
E F
P0
P1
t
W C
B0
D1
P
K0 A0
SOP 8N Symbol W P E F D D1 P0 P1 A0 B0 K0 t C Description Carrier Tape Width Cavity Pitch Perforation Position Cavity to Perforation (Width Direction) Perforation Diameter Cavity Hole Diameter Perforation Pitch Cavity to Perforation (Length Direction) Cavity Length Cavity Width Cavity Depth Carrier Tape Thickness Cover Tape Width Dimensions in mm 12.0+0.3 -0.1 8.00.1 1.750.1 5.50.1 1.550.1 1.5+0.25 4.00.1 2.00.1 6.40.1 5.20.1 2.10.1 0.30.05 9.3
Rev. 1.00
8
February 3, 2005
HT82V736
Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 43F, SEG Plaza, Shen Nan Zhong Road, Shenzhen, China 518031 Tel: 0755-8346-5589 Fax: 0755-8346-5590 ISDN: 0755-8346-5591 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holmate Semiconductor, Inc. (North America Sales Office) 46712 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com
Copyright O 2005 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holteks products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw.
Rev. 1.00
9
February 3, 2005


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